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Class Number: 257 Class Title: ACTIVE SOLID STATE DEVICES (E.G., TRANSISTORS, SOLID STATE DIODES) Subclass Subclass Number Title 1 BULK EFFECT DEVICE 2 .Bulk effect switching in amorphous material 3 ..With means to localize region of conduction (e.g., "pore" structure) 4 ..With specified electrode composition or configuration 5 ..In array 6 .Intervalley transfer (e.g., Gunn effect) 7 ..In monolithic integrated circuit 8 ..Three or more terminal device 9 THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) 10 .Low workfunction layer for electron emission, e.g., photocathode electron emissive layer 11 ..Combined with a heterojunction involving a III-V compound 12 .Heterojunction 13 ..Incoherent light emitter 14 ..Quantum well 15 ...Superlattice 16 ....Of amorphous semiconductor material 17 ....With particular barrier dimension 18 ....Strained layer superlattice 19 .....Si Ge 20 ....Field effect device 21 ....Light responsive structure 22 ....With specified semiconductor materials 23 ...Current flow across well 24 ...Field effect device 25 ...Employing resonant tunneling 26 ..Ballistic transport device 27 ...Field effect transistor 28 .Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers) 29 .Ballistic transport device (e.g., hot electron transistor) 30 .Tunneling through region of reduced conductivity 31 ..Josephson 32 ...Particular electrode material 33 ....High temperature (i.e., >30 Kelvin) 34 ...Weak link (e.g., narrowed portion of superconductive line) 35 ...Particular barrier material 36 ...With additional electrode to control conductive state of Josephson junction 37 ..At least one electrode layer of semiconductor material 38 ...Three or more electrode device 39 ..Three or more electrode device 40 ORGANIC SEMICONDUCTOR MATERIAL 41 POINT CONTACT DEVICE 42 SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM 43 SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CuO, ZnO) OR COPPER SULFIDE 44 WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE 45 .Elongated alloyed region (e.g., thermal gradient zone melting, TGZM) 46 .In pn junction tunnel diode (Esaki diode) 47 .In bipolar transistor structure 48 TEST OR CALIBRATION STRUCTURE 49 NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) 50 .Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element) 51 .Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction) 52 .Amorphous semiconductor material 53 ..Responsive to nonelectrical external signals (e.g., light) 54 ...With Schottky barrier to amorphous material 55 ...Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si Ge , SiN ) 56 ...With impurity other than hydrogen to passivate dangling bonds (e.g., halide) 57 ..Field effect device in amorphous semiconductor material 58 ...With impurity other than hydrogen to passivate dangling bonds (e.g., halide) 59 ...In array having structure for use as imager or display, or with transparent electrode 60 ...With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path) 61 ...With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain) 62 ..With impurity other than hydrogen to passivate dangling bonds (e.g., halide) 63 ..Amorphous semiconductor is alloy or contains material to change band gap (e.g., SixGe1-x, SiNy) 64 .Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation) 65 .Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., GexSi1-x, polycrystalline silicon with dangling bond modifier) 66 .Field effect device in non-single crystal, or recrystallized, semiconductor material 67 ..In combination with device formed in single crystal semiconductor material (e.g., stacked FETs) 68 ...Capacitor element in single crystal semiconductor (e.g., DRAM) 69 ...Field effect transistor in single crystal material, complememtary to that in non-single crystal, or recrystallized, material (e.g., CMOS) 70 ...Recrystallized semiconductor material 71 ..In combination with capacitor element (e.g., DRAM) 72 ..In array having structure for use as imager or display, or with transparent electrode 73 .Schottky barrier to polycrystalline semiconductor material 74 .Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit") 75 .Recrystallized semiconductor material 76 SPECIFIED WIDE BAND GAP (> 1.5eV) SEMICONDUCTOR MATERIAL OTHER THAN GaAsP OR GaAlAs 77 .Diamond or Silicon Carbide 78 .II-IV compound 79 INCOHERENT LIGHT EMITTER STRUCTURE 80 .In combination with or also constituting light responsive device 81 ..With specific housing or contact structure 82 ...Discrete light emitting and light responsive devices 83 ..Light coupled transistor structure 84 ..Combined in integrated structure 85 ...With heterojunction 86 .Active layer of indirect band gap semiconductor 87 ..With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP) 88 .Plural light emitting devices (e.g., matrix, 7-segment array) 89 ..Multi-color emission 90 ...With heterojunction 91 ..With shaped contacts or opaque masking 92 ..Alphanumeric segmented array 93 ..With electrical isolation means in integrated circuit structure 94 .With heterojunction 95 ..With contoured external surface (e.g., dome shape to facilitate light emission) 96 ..Plural heterojunctions in same device 97 ...More than two heterojunctions in same device 98 .With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package 99 .With housing or contact structure 100 .Encapsulated 101 .With particular dopant concentration or concentration profile (e.g., graded junction) 102 .With particular dopant material (e.g., Zinc as dopant in GaAs) 103 .With particular semiconductor material 104 TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE 105 .In three or more terminal device 106 .Reverse bias tunneling structure (e.g., "backward" diode, true Zener diode) 107 REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) 108 .Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal) 109 .Having only two terminals and no control electrode (gate) (e.g., Shockley diode) 110 ..More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.) 111 ..Triggered by VBO overvoltage means 112 ..With highly-doped breakdown diode trigger 113 .With light activation 114 ..With separate light dector integrated on chip with regenerative switching device 115 ..With electrical trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) 116 ..With light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package 117 ...In groove or with thinned semiconductor portion 118 ..With groove or thinned light sensitive portion 119 .Bidirectional rectifier with control electrode (gate) (e.g., Triac) 120 ..Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure) 121 ..With diode or transistor in reverse path 122 ..Lateral 123 ..With trigger signal amplification (e.g., amplified gate) 124 ..Combined with field effect transistor structure 125 ...Controllable emitter shunting 126 ..With means to separate a device into sections having different conductive polarity 127 ...Guard ring or groove 128 ..Having overlapping sections of different conductive polarity 129 ..With means to increase reverse breakdown voltage 130 ..Switching speed enhancement means 131 ...Recombination centers or deep level dopants 132 .Five or more layer unidirectional structure 133 .Combined with field effect transistor 134 ..J-FET (junction field effect transistor) 135 ...Vertical (i.e., where the source is located above the drain or vice versa) 136 ....Enhancement mode (e.g., so-called SITs) 137 ..Having controllable emitter shunt 138 ...Having gate turn off (GTO) feature 139 ..With extended latchup current level (e.g., COMFET device) 140 ...Combined with other solid state active device in integrated structure 141 ...Lateral structure, i.e., current flow parallel to main device surface 142 ...Having impurity doping for gain reduction 143 ...Having anode shunt means 144 ...Cathode emitter or cathode electrode feature 145 ...Low impedance channel contact extends below surface 146 .Combined with other solid state active device in integrated structure 147 .With extended latchup current level (e.g., gate turn off "GTO" device) 148 ..Having impurity doping for gain reduction 149 ..Having anode shunt means 150 ..With specified housing or external terminal 151 ...External gate terminal structure or composition 152 ..Cathode emitter or cathode electrode feature 153 ..Gate region or electrode feature 154 .With resistive region connecting separate sections of device 155 .With switching speed enhancement means (e.g., Schottky contact) 156 ..Having deep level dopants or recombination centers 157 .With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) 158 ..Three or more amplification stages 159 ..Transistor as amplifier 160 ..With distributed amplified current 161 ..With a turn-off diode 162 .Lateral structure 163 .Emitter region feature 164 ..Multi-emitter region (e.g., emitter geometry or emitter ballast resistor) 165 ...Laterally symmetric regions 166 ...Radially symmetric regions 167 .Having at least four external electrodes 168 .With means to increase breakdown voltage 169 ..High resistivity base layer 170 ..Surface feature (e.g., guard ring, groove, mesa) 171 ...Edge feature (e.g., beveled edge) 172 .With means to lower "ON" voltage drop 173 .Device protection (e.g., from overvoltage) 174 ..Rate of rise of current (e.g., dI/dt) 175 .With means to control triggering (e.g., gate electrode configuration, zener diode firing, dV/dt control, transient control by ferrite bead, etc.) 176 ..Located in an emitter-gate region 177 .With housing or external electrode 178 ..With means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor) 179 ...With malleable electrode (e.g., silver electrode layer) 180 ..Stud mount 181 ..With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element (e.g., ring) 182 ...With lead feedthrough means on side of housing 183 HETEROJUNCTION DEVICE 183.1 .Charge transfer device 184 .Light responsive structure 185 ..Staircase (including graded composition) device 186 ..Avalanche photodetection structure 187 ..Having transistor structure 188 ..Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.) 189 ...Layer is a group III-V semiconductor compound 190 .With lattice constant mismatch (e.g., with buffer layer to accomodate mismatch) 191 .Having graded composition 192 .Field effect transistor 194 ..Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT) 195 ...Combined with diverse type device 196 .Both semiconductors of the heterojunction are the same conductivity type (i.e., either N or P) 197 .Bipolar transistor 198 ..Wide band gap emitter 199 .Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes) 200 .Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI)) 201 .Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs 202 GATE ARRAYS 203 .With particular chip input/output means 204 .Having specific type of active device (e.g., CMOS) 205 ..With bipolar transistors or with FETs of only one channel conductivity type (e.g., enhancement-depletion FETs) 206 ..Particular layout of complementary FETs with regard to each other 207 .With particular power supply distribution means 208 .With particular signal path connections 209 ..Programmable signal paths (e.g., with fuse elements, laser programmable, etc.) 210 ..With wiring channel area 211 ..Multi-level metallization 212 CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR) 213 FIELD EFFECT DEVICE 214 .Charge injection device 215 .Charge transfer device 216 ..Majority signal carrier (e.g., buried or bulk channel, or peristaltic) 217 ...Having a conductive means in direct contact with channel (e.g., non- insulated gate) 218 ...High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semi-conductor) or minority carriers at input (e.g., surface channel input) 219 ...Impurity concentration variation 220 ....Vertically within channel (e.g., profiled) 221 ....Along the length of the channel (e.g., doping variations for transfer directionality) 222 ...Responsive to non-electrical external signal (e.g., imager) 223 ....Having structure to improve output signal (e.g., antiblooming drain) 224 ...Channel confinement 225 ..Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) 226 ...Sensor element and charge transfer device are of different materials or on different substrates (e.g., "hybrid") 227 ...With specified dopant (e.g., photoionizable, "extrinsic" detectors for infrared) 228 ...Light responsive, back illuminated 229 ...Having structure to improve output signal (e.g., exposure control structure) 230 ....With blooming suppression structure 231 ...2-dimensional area architecture 232 ....Having alternating strips of sensor structures and register structures (e.g., interline imager) 233 ....Sensors not overlaid by electrode (e.g., photodiodes) 234 ...Single strip of sensors (e.g., linear imager) 235 ..Electrical input 236 ...Signal applied to field effect electrode 237 ....Charge-presetting/linear input type (e.g., fill and spill) 238 ...Input signal responsive to signal charge in charge transfer device (e.g., regeneration or feedback) 239 ..Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output) 240 ..Changing width or direction of channel (e.g., meandering channel) 241 ..Multiple channels (e.g., converging or diverging or parallel channels) 242 ..Vertical charge transfer 243 ..Channel confinement 244 ..Comprising a groove 245 ..Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) 246 ...Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit") 247 ....Uniphase or virtual phase structure 248 ....2-phase 249 ...Electrode structures or materials 250 ....Plural gate levels 251 ..Substantially incomplete signal charge transfer (e.g., bucket brigade) 252 .Responsive to non-optical, non-electrical signal 253 ..Chemical (e.g., ISFET, CHEMFET) 254 ..Physical deformation (e.g., strain sensor, acoustic wave detector) 255 .With current flow along specified crystal axis (e.g., axis of maximum carrier mobility) 256 .Junction field effect transistor (unipolar transistor) 257 ..Light responsive or combined with light responsive device 258 ...In imaging array 259 ..Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor) 260 ..Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell) 261 ..Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure) 262 ..Combined with insulated gate field effect transistor (IGFET) 263 ..Vertical controlled current path 264 ...Enhancement mode or with high resistivity channel (e.g., doping of 1015cm-3 or less) 265 ...In integrated circuit 266 ...With multiple parallel current paths (e.g., grid gate) 267 ....With Schottky barrier gate 268 ..Enhancement mode 269 ...With means to adjust barrier height (e.g., doping profile) 270 ..Plural, separately connected, gates control same channel region 271 ..Load element or constant current source (e.g., with source to gate connection) 272 ..Junction field effect transistor in integrated circuit 273 ...With bipolar device 274 ...Complementary junction field effect transistors 275 ...Microwave integrated circuit (e.g., microstrip type) 276 ....With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate (e.g., air bridge) 277 ....With capacitive or inductive elements 278 ...With devices vertically spaced in different layers of semiconductor material (e.g., "3-dimensional" integrated circuit) 279 ..Pn junction gate in compound semiconductor material (e.g., GaAs) 280 ..With Schottky gate 281 ...Schottky gate to silicon semiconductor 282 ...Gate closely aligned to source region 283 ....With groove or overhang for alignment 284 ...Schottky gate in groove 285 ..With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface) 286 ..With non-uniform channel thickness or width 287 ..With multiple channels or chanel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET) 288 .Having insulated electrode (e.g., MOSFET, MOS diode) 289 ..Significant semiconductor chemical compound in bulk crystal (e.g., GaAs) 290 ..Light responsive or combined with light responsive device 291 ...Imaging array 292 ....Photodiodes accessed by FETs 293 ....Photoresistors accessed by FETs, or photodetectors separate from FET chip 294 ....With shield, filter, or lens 295 ..With ferroelectric material layer 296 ..Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) 297 ...With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection) 298 ...Capacitor for signal storage in combination with non-volatile storage means 299 ...Structure configured for voltage converter (e.g., charge pump, substrate bias generator) 300 ...Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., nondestructive readout dynamic memory cell structure) 301 ...Capacitor in trench 302 ....Vertical transistor 303 ....Stacked capacitor 304 ....Storage node isolated by dielectric from semiconductor substrate 305 ....With means to insulate adjacent storage nodes (e.g., channel stops or field oxide) 306 ...Stacked capacitor 307 ....Parallel interleaved capacitor electrode pairs (e.g., interdigitized) 308 .....With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post) 309 ....With increased effective electrode surface area (e.g., tortuous path, corrugated, or textured electrodes) 310 ...With high dielectric constant insulator (e.g., Ta2Os) 311 ...Storage node isolated by dielectric from semiconductor substrate 312 ...Voltage variable capacitor (i.e., capacitance varies with applied voltage) 313 ...Inversion layer capacitor 314 ..Variable threshold (e.g., floating gate memory device) 315 ...With floating gate electrode 316 ....With additional contacted control electrode 317 .....With irregularities on electrode to facilitate charging or discharging of floating electrode 318 .....Additional control electrode is doped region in semiconductor substrate 319 .....Plural additional contacted control electrodes 320 ......Separate control electrodes for charging and for discharging floating electrode 321 .....With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling 322 .....With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction) 323 ....With means to facilitate light erasure 324 ...Multiple insulator layers (e.g., MNOS structure) 325 ....Non-homogeneous composition insulator layer (e.g., graded composition layer or layer with inclusions) 326 ....With additional, non-memory control electrode or channel portion (e.g., accessing field effect transistor structure) 327 ..Short channel insulated gate field effect transistor 328 ...Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode) 329 ...Gate controls vertical charge flow portion of channel (e.g., VMOS device) 330 ....Gate electrode in groove 331 .....Plural gate electrodes or grid shaped gate electrode 332 .....Gate electrode self-aligned with groove 333 .....With thick insulator to reduce gate capacitance in non-channel areas (e.g., thick oxide over source or drain region) 334 .....In integrated circuit structure 335 ...Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) 336 ....With lightly doped portion of drain region adjacent channel (e.g., LDD structure) 337 ....In integrated circuit structure 338 .....With complementary field effect transistor 339 ....With means to increase breakdown voltage 340 ....With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode) 341 ....Plural sections connected in parallel (e.g., power MOSFET) 342 .....With means to reduce ON resistance 343 ....All contacts on same surface (e.g., lateral structure) 344 ...With lightly doped portion of drain region adjacent channel (e.g., LDD structure) 345 ...With means to prevent sub-surface currents, or with non-uniform channel doping 346 ...Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate) 347 ..Single crystal semiconductor layer on insulating substrate (SOI) 348 ...Depletion mode field effect transistor 349 ...With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate 350 ...Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) 351 ....Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components) 352 ...Substrate is single crystal insulator (e.g., sapphire or spinel) 353 ....Single crystal islands or semiconductor layer containing only one active device 354 .....Including means to eliminate island edge effects (e.g., insulating filling between islands, or channel stop regions in island edges) 355 ..With overvoltage protective means 356 ...For protecting against gate insulator breakdown 357 ....In complementary field effect transistor integrated circuit 358 .....Including resistor element 359 ......As thin film structure (e.g., polysilicon resistor) 360 ....Protection device includes insulated gate transistor structure (e.g., combined with resistor element) 361 .....For operation as bipolar or punchthrough element 362 ....Punchthrough or bipolar element 363 ....Including resistor element 364 ..With resistive gate electrode 365 ..With plural, separately connected, gate electrodes in same device 366 ...Overlapping gate electrodes 367 ..Insulated gate controlled breakdown of pn junction (e.g., field plate diode) 368 ..Insulated gate field effect transistor in integrated circuit 369 ...Complementary insulated gate field effect transistors 370 ....Combined with bipolar transistor 371 ....Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells 372 ....With means to prevent latchup or parasitic conduction channels 373 ....With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action 374 .....Dielectric isolation means (e.g., dielectric layer in vertical grooves) 375 .....With means to reduce substrate spreading resistance (e.g., heavily doped substrate) 376 .....With barrier region of reduced minority carrier lifetime (e.g., heavily doped P+ region to reduce electron minority carrier lifetime, or containing deep level impurity or crystal damage), or with region of high threshold voltage (e.g., heavily doped channel stop region) 377 ....With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide) 378 ...Combined with bipolar transistor 379 ...Combined with passive components (e.g., resistors) 380 ....Polysilicon resistor 381 ....With multiple levels of polycrystalline silicon 382 ...With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) 383 ....Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium) 384 ....Including silicide 385 ....Multiple polysilicon layers 386 ...With means to reduce parasitic capacitance 387 ....Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate) 388 .....Gate electrode consists of refractory or platinum group metal or silicide 389 ....With thick insulator over source or drain region 390 ...Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM)) 391 ....Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations) 392 ...Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) 393 ...Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor 394 ...With means to prevent parasitic conduction channels 395 ....Thick insulator portion 396 .....Recessed into semiconductor surface 397 ......In vertical-walled groove 398 ......Combined with heavily doped channel stop portion 399 .....Combined with heavily doped channel stop portion 400 ....With heavily doped channel stop portion 401 ...With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET) 402 ..With permanent threshold adjustment (e.g., depletion mode) 403 ...With channel conductivity dopant same type as that of source and drain 404 ....Non-uniform channel doping 405 ...With gate insulator containing specified permanent charge 406 ....Plural gate insulator layers 407 ...With gate electrode of controlled workfunction material (e.g., low workfunction gate material) 408 ..Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device) 409 ..With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.) 410 ..Gate insulator includes material (including air or vacuum) other than SiO2 411 ...Composite or layered gate insulator (e.g., mixture such as silicon oxynitride) 412 ..Gate electrode of refractory material (e.g., polysilicon or silicide of a refractory or platinum group metal) 413 ...Polysilicon laminated with silicide 414 RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) 415 .Physical deformation 416 ..Acoustic wave 417 ..Strain sensors 418 ...With means to concentrate stress 419 ....With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g., diaphragm type strain gauge) 420 ..Means to reduce sensitivity to physical deformation 421 .Magnetic field 422 ..With magnetic field directing means (e.g., shield, pole piece, etc.) 423 ..Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor) 424 ..Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field) 425 ..Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.) 426 ..Differential output (e.g., with offset ajustment means or with means to reduce temperature sensitivity) 427 ..Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit) 428 .Electromagnetic or particle radiation 429 ..Charged or elementary particles 430 ...With active region having effective impurity concentration less than 1012 atoms/cm3 431 ..Light 432 ...With optical element 433 ...With housing or encapsulation 434 ....With window means 435 ...With optical shield or mask means 436 ...With means for increasing light absorption (e.g., redirection of unabsorbed light) 437 ....Antireflection coating 438 ...Avalanche junction 439 ...Containing dopant adapted for photoionization 440 ...With different sensor portions responsive to different wavelengths (e.g., color imager) 441 ...Narrow band gap semiconductor (<<1 eV) (e.g., PbSnTe) 442 ....II-VI compound semiconductor (e.g., HgCdTe) 443 ...Matrix or array (e.g., single line arrays) 444 ....Light sensor elements overlie active switching elements in integrated circuit (e.g., where the sensor elements are deposited on an integrated circuit) 445 ....With antiblooming means 446 ....With specific isolation means in intgrated circuit 447 ....With backside illumination (e.g., having a thinned central area or a non-absorbing substrate) 448 ....With particular electrode configuration 449 ...Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)) 450 ....With doping profile to adjust barrier height 451 ....Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor) 452 ....With edge protection, e.g., doped guard ring or mesa structure 453 ....With specified Schottky metallic layer 454 .....Schottky metallic layer is a silicide 455 ......Silicide of Platinum group metal 456 ......Silicide of refractory metal 457 ....With particular contact geometry (e.g., ring or grid) 458 ...PIN detector, including combinations with non-light responsive active devices 459 ...With particular contact geometry (e.g., ring or grid, or bonding pad arrangement) 460 ...With backside illumination (e.g., with a thinned central area or non-absorbing substrate) 461 ...Light responsive pn junction 462 ....Phototransistor 463 ....With particular doping concentration 464 ....With particular layer thickness (e.g., layer less than light absorption depth) 465 ....Geometric configuration of junction (e.g., fingers) 466 ...External physical configuration of semiconductor (e.g., mesas, grooves) 467 .Temperature 468 ..Semiconductor device operated at cryogenic temperature 469 ..With means to reduce temperature sensitivity (e.g., reduction of temperature sensitivity of junction breakdown voltage by using a compensating element) 470 ..Pn junction adapted as temperature sensor 471 SCHOTTKY BARRIER 472 .To compound semiconductor 473 ..With specified Schottky metal 474 .As active junction in bipolar transistor (e.g., Schottky collector) 475 .With doping profile to adjust barrier height 476 .In integrated structure 477 ..With bipolar transistor 478 ...Plural Schottky barriers with different barrier heights 479 ...Connected across base-collector junction of transistor (e.g., Baker clamp) 480 .In voltage variable capacitance diode 481 .Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts) 482 ..Microwave transit time device (e.g., IMPATT diode) 483 .With means to prevent edge breakdown 484 ..Guard ring 485 .Specified materials 486 ..Layered (e.g., a diffusion barrier material layer or a silicide layer or a precious metal layer) 487 WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD 488 .Field relief electrode 489 ..Resistive 490 ..Combined with floating pn junction guard region 491 .In integrated circuit 492 ..With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices) 493 .With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices) 494 .Reverse-biased pn junction guard region 495 .Floating pn junction guard region 496 .With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.) 497 PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE) 498 .Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "bipolar SIT" devices) 499 INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS 500 .Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit 501 ..Including dielectric isolation means 502 ..High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact) 503 .With contact or metallization configuration to reduce parasitic coupling (e.g., separate ground pads for different parts of integrated circuit) 504 .Including means for establishing a depletion region throughout a semi- conductor layer for isolating devices in different portions of the layer (e.g., "JFET" isolation) 505 .With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material 506 .Including dielectric isolation means 507 ..With single crystal insulating substrate (e.g., sapphire) 508 ..With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer) 509 ..Combined with pn junction isolation (e.g., isoplanar, LOCOS) 510 ...Dielectric in groove 511 ....With complementary (npn and pnp) bipolar transistor structures) 512 .....Complementary devices share common active region (e.g., integrated injection logic, I2L) 513 ....Vertical walled groove 514 .....With active junction abutting groove (e.g., "walled emitter") 515 ....With active junction abutting groove (e.g., "walled emitter") 516 ....With passive component (e.g., resistor, capacitor, etc.) 517 ....With bipolar transistor structure 518 .....With polycrystalline connecting region (e.g., polysilicon base contact) 519 ....Including heavily doped channel stop region adjacent groove 520 ....Conductive filling in dielectric-lined groove (e.g., polysilicon backfill) 521 ....Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.) 522 ..Air isolation (e.g., beam lead supported semiconductor islands) 523 ..Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment) 524 ..Full dielectric isolation with polycrystalline semiconductor substrate 525 ...With complementary (npn and pnp) bipolar transistor structures 526 ..With bipolar transistor structure 527 ...Sides of isolated semiconductor islands along major crystal planes (e.g., (111), (100) planes, etc.) 528 .Passive components in ICs 529 ..Including programmable passive component (e.g., fuse) 530 ...Anti-fuse 531 ..Including inductive element 532 ..Including capacitor component 533 ...Combined with resistor to form RC filter structure 534 ...With means to increase surface area (e.g., grooves, ridges, etc.) 535 ...Both terminals of capacitor isolated from substrate 536 ..Including resistive element 537 ...Using specific resistive material 538 ....Polycrystalline silicon (doped or undoped) 539 ...Combined with bipolar transistor 540 ....With compensation for non-linearity (e.g., dynamic isolation pocket bias) 541 ....Pinch resistor 542 ....Resistor has same doping as emitter or collector of bipolar transistor 543 ....Lightly doped junction isolated resistor (e.g., ion implanted resistor) 544 .With pn junction isolation 545 ..With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width) 546 ..With structural means to protect against excess or reversed polarity voltage 547 ..With structural means to control parasitic transistor action or leakage current 548 ..At least three regions of alternating conductivity types with dopant concentration gradients decreasing from surface of semiconductor (e.g., "triple-diffused" integrated circuit) 549 ..With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit) 550 ..With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent 551 ..Including voltage reference element (e.g., avalanche diode, so-called "Zener diode" with breakdown voltage greater than 6 volts or with positive temperature coefficient of breakdown voltage) 552 ..With bipolar transistor structure 553 ...Transistors of same conductivity type (e.g., npn) having different current gain or different operating voltage characteristics 554 ...With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact) 555 ...Complementary bipolar transistor structures (e.g., integrated injection logic, I2L) 556 ....Including lateral bipolar transistor structure 557 .Lateral bipolar transistor structure 558 ..With base region doping concentration step or gradient or with means to increase current gain 559 ..With active region formed along groove or exposed edge in semiconductor 560 ..With multiple collectors or emitters 561 ...With different emitter to collector spacings or facing areas 562 ...With auxiliary collector/re-emitter between emitter and output collector (e.g., "current hogging logic" device) 563 .With multiple separately connected emitter, collector, or base regions in same transistor structure 564 ..Multipe base or collector regions 565 BIPOLAR TRANSISTOR STRUCTURE 566 .Plural non-isolated transistor structures in same structure 567 ..Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) 568 ...More than two Darlington-connected transistors 569 ...Complementary Darlington-connected transistors 570 ...With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.) 571 ...Non-planar structure (e.g., mesa emitter, or having a groove to define resistor) 572 ...With resistance means connected between transistor base regions 573 ...With housing or contact structure or configuration 574 ..Complementary transistors share common active region (e.g., integrated injection logic I2L) 575 ...Including lateral bipolar transistor structure 576 ....With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal) 577 .Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.) 578 .With enlarged emitter area (e.g., power device) 579 ..With separate emitter areas connected in parallel 580 ...With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means) 581 ....Thin film ballasting means (e.g., polysilicon resistor) 582 ..With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors) 583 ..With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown) 584 ..With housing or contact (i.e., electrode) means 585 .With means to increase inverse gain 586 .With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.) 587 .With specified electrode means 588 ..Including polycrystalline semiconductor as connection 589 .Avalanche transistor 590 .With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage) 591 .With emitter region having specified doping concentration profile (e.g., high-low concentration step) 592 .With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base)) 593 .With means to increase current gain or operating frequency 594 WITH GROOVE TO DEFINE PLURAL DIODES 595 VOLTAGE VARIABLE CAPACITANCE DEVICE 596 .With specified dopant profile 597 ..Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction) 598 .With plural junctions whose depletion regions merge to vary voltage dependence 599 .With means to increase active junction area (e.g., grooved or convoluted surface) 600 .With physical configuration to vary voltage dependence (e.g., mesa) 601 .Plural diodes in same non-isolated structure, or device having three or more terminals 602 .With specified housing or contact 603 AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS) 604 .Microwave transit time device (e.g., IMPATT diode) 605 .With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage) 606 ..Subsurface breakdown 607 WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION) 608 .Switching device based on filling and emptying of deep energy levels 609 .For compound semiconductor (e.g., deep level dopant) 610 .Deep level dopant 611 ..With specified distribution (e.g., laterally localized, with specified concentration distribution or gradient) 612 ..Deep level dopant other than gold or platinum 613 INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GaAs) (E.G., PbxSn1-xTe) 614 .Group II-VI compound (e.g., CdTe, HgxCd1-xTe) 615 .Group III-V compound (e.g., InP) 616 .Containing germanium, Ge 617 INCLUDING REGION CONTAINING CRYSTAL DAMAGE 618 PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) 619 .With thin active central semiconductor portion surrounded by thicker inactive shoulder (e.g., for mechanical support) 620 .With peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area) 621 .With electrical contact in hole in semiconductor (e.g., lead extends through semiconductor body) 622 .Groove 623 .Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) 624 ..With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode) 625 ..Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode) 626 ..Combined with passivating coating 627 .With specified crystal plane or axis 628 ..Major crystal plane or axis other than (100), (110), or (111) (e.g., (731) axis, crystal plane several degrees from (100) toward (011), etc.) 629 WITH MEANS TO CONTROL SURFACE EFFECTS 630 .With inversion-preventing shield electrode 631 .In compound semiconductor material (e.g., GaAs) 632 .Insulating coating 633 ..With thermal expansion compensation (e.g., thermal expansion of glass passivant matched to that of semiconductor) 634 ..Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass) 635 ..Multiple layers 636 ...At least one layer of semi-insulating material 637 ...Three or more insulating layers 638 ...With discontinuous or varying thickness layer (e.g., layer covers only selected portions of semiconductor) 639 ...At least one layer of silicon oxynitride 640 ...At least one layer of silicon nitride 641 ....Combined with glass layer 642 ...At least one layer of organic material 643 ....Polyimide or polyamide 644 ...At least one layer of glass 645 ...Insulating layer containing specified electrical charge (e.g., net negative electrical charge) 646 ..Coating of semi-insulating material (e.g., amorphous silicon or silicon-rich silicon oxide) 647 ..Insulating layer recessed into semiconductor surface (e.g., LOCOS oxide) 648 ...Combined with channel stop region in semiconductor 649 ..Insulating layer of silicon nitride or silicon oxynitride 650 ..Insulating layer of glass 651 ..Details of insulating layer electrical charge (e.g., negative insulator layer charge) 652 .Channel stop layer 653 WITH SPECIFIED SHAPE OF PN JUNCTION 654 .Interdigitated pn junction or more heavily doped side of junction is concave 655 WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT 656 .With high resistivity (e.g., "intrinsic") layer between p and n layers (e.g., PIN diode) 657 .Stepped profile 658 PLATE TYPE RECTIFIER ARRAY 659 WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGE PARTICLES) 660 .With means to shield device contained in housing or package from charged particles (e.g., alpha particles) or highly ionizing radiation (i.e., hard X-rays or shorter wavelength) 661 SUPERCONDUCTIVE CONTACT OR LEAD 662 .Transmission line or shielded 663 .On integrated circuit 664 TRANSMISSION LINE LEAD (E.G., STRIPLINE, COAX, ETC.) 665 CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS 666 LEAD FRAME 667 .With dam or vent for encapsulant 668 .On insulating carrier other than a printed circuit board 669 .With stress relief 670 .With separate tie bar element or plural tie bars 671 ..Of insulating material 672 .Small lead frame (e.g., "spider" frame) for connecting a large lead frame to a semiconductor chip 673 .With bumps on ends of lead fingers to connect to semiconductor 674 .With means for controlling lead tension 675 .With heat sink means 676 .With structure for mounting semiconductor chip to lead frame (e.g., configuration of die bonding flag, absence of a die bonding flag, recess for LED) 677 .Of specified material other than copper (e.g., Kovar (T.M.)) 678 HOUSING OR PACKAGE 679 .Smart (e.g., credit) card package 680 .With window means 681 ..For erasing EPROM 682 .With desiccant, getter, or gas filling 683 .With means to prevent explosion of package 684 .With semiconductor element forming part (e.g., base, of housing) 685 .Multiple housings 686 ..Stacked arrangement 687 .Housing or package filled with solid or liquid electrically insulating material 688 .With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element (e.g., ring) 689 ..Rigid electrode portion 690 .With contact or lead 691 ..Having power distribution means (e.g., bus structure) 692 ..With particular lead geometry 693 ...External connection to housing 694 ....Axial leads 695 ....Fanned/radial leads 696 ....Bent (e.g., J-shaped) lead 697 ....Pin grid type 698 ..With specific electrical feedthrough structure 699 ...Housing entirely of metal except for feedthrough structure 700 ..Multiple contact layers separated from each other by insulator means and forming part of a package of housing (e.g., plural ceramic layer package) 701 .Insulating material 702 ..Of insulating material other than ceramic 703 ..Composite ceramic, or single ceramic with metal 704 ..Cap or lid 705 ..Of high thermal conductivity ceramic (e.g., BeO) 706 ..With heat sink 707 ...Directly attached to semiconductor device 708 .Entirely of metal except for feedthrough 709 ..With specified insulator to isolate device from housing 710 ..With specified means (e.g., lip) to seal base to cap 711 ..With raised portion of base for mounting semiconductor chip 712 .With provision for cooling the housing or its contents 713 ..For integrated circuit 714 ..Liquid coolant 715 ...Boiling (evaporative) liquid 716 ...Cryogenic liquid coolant 717 ..Isolation of cooling means (e.g., heat sink) by an electrically insulating element (e.g., spacer) 718 ..Heat dissipating element held in place by clamping or spring means 719 ...Pressed against semiconductor element 720 ..Heat dissipating element has high thermal conductivity insert (e.g., copper slug in aluminum heat sink) 721 ..With gas coolant 722 ...With fins 723 .For plural devices 724 ..With discrete components 725 ..With electrical isolation means 726 ...Devices held in place by clamping 727 .Device held in place by clamping 728 .For high frequency (e.g., microwave) device 729 .Portion of housing of specific materials 730 .Outside periphery of package having specified shape or configuration 731 .With housing mount 732 ..Flanged mount 733 ..Stud mount 734 COMBINED WITH ELECTRICAL CONTACT OR LEAD 735 .Beam leads (i.e., leads that extend beyond the ends or sides of a chip component) 736 ..Layered 737 .Bump leads 738 ..Ball shaped 739 .With textured surface 740 .With means to prevent contact from penetrating shallow pn junction (e.g., prevention of aluminum "spiking") 741 .Of specified material other than unalloyed aluminum 742 ..With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal 743 ...For compound semiconductor contact material 744 ..For compound semiconductor material 745 ...Contact for III-V material 746 ..Composite material (e.g., fibers or strands embedded in solid matrix) 747 ..With thermal expansion matching of contact or lead material to semiconductor active device 748 ...Plural layers of specified contact or lead material 749 ..At least portion of which is transparent to ultraviolet, visible or infrared light 750 ..Layered 751 ...At least one layer forms a diffusion barrier 752 ...Planarized to top of insulating layer 753 ...With adhesion promoting means (e.g., layer of material) to promote adhesion of contact to an insulating layer 754 ...At least one layer of silicide or polycrystalline silicon 755 ....Polysilicon laminated with silicide 756 ....Multiple polysilicon layers 757 ....Silicide of refractory or platinum group metal 758 ...Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) 759 ....Including organic insulating material between metal levels 760 ....Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride) 761 ...At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum 762 ...At least one layer containing silver or copper 763 ...At least one layer of molybdenum, titanium, or tungsten 764 ....Alloy containing molybdenum, titanium, or tungsten 765 ...At least one layer of an alloy containing aluminum 766 ...At least one layer containing chromium or nickel 767 ..Resistive to electromigration or diffusion of the contact or lead material 768 ..Refractory or platinum group metal or alloy or silicide thereof 769 ...Platinum group metal or silicide thereof 770 ...Molybdenum, tungsten, or titanium or their silicides 771 ..Alloy containing aluminum 772 ..Solder composition 773 .Of specified configuration 774 ..Via (interconnection hole) shape 775 ..Varying width or thickness of conductor 776 ..Cross-over arrangement, component or structure 777 .Chip mounted on chip 778 .Flip chip 779 .Solder wettable contact, lead or bond 780 .Ball or nail head type contact, lead or bond 781 ..Layered contact, lead or bond 782 .Die bond 783 ..With adhesive means 784 .Wire contact, lead or bond 785 .By pressure alone 786 .Configuration or pattern of bonds 787 ENCAPSULATED 788 .With specified encapsulant 789 ..With specified filler material 790 ..Plural encapsulating layers 791 ..Including polysiloxane (e.g., silicone resin) 792 ..Including polyimide 793 ..Including epoxide 794 ..Including glass 795 .With specified filler material 796 .With heat sink embedded in encapsulant 797 ALIGNMENT MARKS 798 MISCELLANEOUS * ****************************** * CROSS-REFERENCE ART COLLECTIONS * ****************************** 900 MOSFET TYPE GATE SIDEWALL INSULATING SPACER 901 MOSFET SUBSTRATE BIAS 902 FET WITH METAL SOURCE REGION 903 FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL 904 .With passive components (e.g., polysilicon resistors) 905 PLURAL DRAM CELLS SHARE COMMON CONTACT OR COMMON TRENCH 906 DRAM WITH CAPACITOR ELECTRODES USED FOR ACCESSING (E.G., BIT LINE IS CAPACITOR PLATE) 907 FOLDED BIT LINE DRAM CONFIGURATION 908 DRAM CONFIGURATION WITH TRANSISTORS AND CAPACITORS OF PAIRS OF CELLS ALONG A STRAIGHT LINE BETWEEN ADJACENT BIT LINES 909 MACROCELL ARRAYS (E.G., GATE ARRAYS WITH VARIABLE SIZE OR CONFIGURATION OF CELLS) 910 DIODE ARRAYS (E.G., DIODE READ-ONLY MEMORY ARRAY) 911 LIGHT SENSITIVE ARRAY ADAPTED TO BE SCANNED BY ELECTRON BEAM (E.G., VIDICON DEVICE) 912 CHARGE TRANSFER DEVICE USING BOTH ELECTRON AND HOLE SIGNAL CARRIERS 913 WITH MEANS TO ABSORB OR LOCALIZE UNWANTED IMPURITIES OR DEFECTS FROM SEMICONDUCTORS (E.G., HEAVY METAL GETTERING) 914 POLYSILICON CONTAINING OXYGEN, NITROGEN, OR CARBON (E.G., SIPOS) 915 WITH TITANIUM NITRIDE PORTION OR REGION 916 NARROW BAND GAP SEMICONDUCTOR MATERIAL (<< 1eV) 917 PLURAL DOPANTS OF SAME CONDUCTIVITY TYPE IN SAME REGION 918 LIGHT EMITTING REGENERATIVE SWITCHING DEVICE (E.G., LIGHT EMITTING SCR) ARRAYS, CIRCUITRY, ETC. 919 ELEMENTS OF SIMILAR CONSTRUCTION CONNECTED IN SERIES OR PARALLEL TO AVERAGE OUT MANUFACTURING VARIATIONS IN CHARACTERISTICS 920 CONDUCTOR LAYERS ON DIFFERENT LEVELS CONNECTED IN PARALLEL (E.G., TO REDUCE RESISTANCE) 921 RADIATION HARDENED SEMICONDUCTOR DEVICE 922 WITH MEANS TO PREVENT INSPECTION OF OR TAMPERING WITH AN INTEGRATED CIRCUIT (E.G., "SMART CARD" ANTI-TAMPER) 923 WITH MEANS TO OPTIMIZE ELECTRICAL CONDUCTOR CURRENT CARRYING CAPACITY (E.G., PARTICULAR CONDUCTOR ASPECT RATIO) 924 WITH PASSIVE DEVICE (E.G., CAPACITOR), OR BATTERY AS INTEGRAL PART OF HOUSING OR HOUSING ELEMENT (E.G., CAP) 925 BRIDGE RECTIFIER MODULE 926 ELONGATED LEAD EXTENDING AXIALLY THROUGH ANOTHER ELONGATED LEAD 927 DIFFERENT DOPING LEVELS IN DIFFERENT PARTS OF PN JUNCTION TO PRODUCE SHAPED DEPLETION LAYER 928 WITH SHORTED PN OR SCHOTTKY JUNCTION OTHER THAN EMITTER JUNCTION 929 PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER) 930 THERMOELECTRIC (E.G., PELTIER EFFECT) COOLING